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An impact of thermal electron energy on the field-electron emission from nanosized silicon tipsстатья
- Авторы: Djuzhev N.A., Demin G.D., Glagolev P.Y., Makhiboroda M.A., Patyukov N.N.
- Сборник: 31st International Vacuum Nanoelectronics Conference
- Год издания: 2018
- Место издания: Institute of Electrical and Electronics Engineers Inc
- Номер статьи: 8520046
- Аннотация: Thermal effects associated with the thermal energy of electrons play an important role in the process of field emission from a nanoscale silicon tip. To estimate the contribution of these effects, a self-consistent numerical calculation of the temperature of the semiconductor emitter, heated by the field-emission current, was carried out. It was experimentally obtained that the melting of the silicon field emitter occurs at currents less than 1 μA, for which the calculated temperature of the silicon tip varies only up to 420 K and does not exceed the melting point of Si. For this reason, we suppose that this effect can be caused by the sputtering of the anode material by hot field-emitted electrons that collect a high power density (300 W/cm2 at 1 μA) on the anode surface. It also can lead to the possible generation of self-sustained plasma in the space gap between anode and cathode. The considered thermal phenomena should be taken into account during the development and predictive modelling of vacuum nanoelectronic devices. © 2018 IEEE.
- Добавил в систему: Демин Глеб Дмитриевич