Molecular Dynamics Simulation of silicon irradiation with low-energy noble gas ionsстатья
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Дата последнего поиска статьи во внешних источниках: 21 октября 2020 г.
Аннотация:The simulation of crystalline silicon irradiation with low-energy (50–500 eV) noble gas ions (He, Ne, Ar, Kr, Xe) was performed using the molecular dynamics method with damage accumulation. The analysis of structural changes in near-surface layers of material demonstrated significant differences in the mechanism of material damage by light and heavy particles. It is shown that under Xe and especially He ion irradiation the largest clusters of implanted atoms are formed.