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Atomistic Simulation of Stresses in Growing Silicon Dioxide Filmsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 7 июля 2020 г.
- Авторы: Grigoriev Fedor V., Sulimov Vladimir B., Tikhonravov Alexander V.
- Журнал: Coatings
- Том: 10
- Год издания: 2020
- Издательство: MDPI
- Местоположение издательства: Basel, Switzerland
- Первая страница: 220
- Последняя страница: 230
- DOI: 10.3390/coatings10030220
- Аннотация: Abstract: Dependence of stress values in silicon dioxide films on its thickness in the initial stage of film growth was investigated using atomistic molecular dynamics simulation. It was shown that the stress in normally deposited films was compressive and varied slightly with growth of film thickness. The stress in the glancing angle deposited films was several times lower than the stress in the normally deposited films, and varied from compressive stress to tensile stress with increasing film thickness. An essential anisotropy of stress tensor components was revealed for the case of glancing angle deposition. The calculated stress values were in the interval of experimental data
- Добавил в систему: Григорьев Федор Васильевич