Blow-up phenomena in the model of a space charge stratification in semiconductors: analytical and numerical analysisстатья
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Дата последнего поиска статьи во внешних источниках: 5 июня 2017 г.
Аннотация:The initial-boundary value problems for a Sobolev equation with exponential nonlinearities, classical, and nonclassical boundary conditions are considered. For this model, which describes processes in crystalline semiconductors, the blowup phenomena are studied. The sufficient blow-up conditions and the blow-up time are analyzed by the method of the test functions. This analytical a priori information is used in the numerical experiments, which are able to determine the process of the solution’s blow-up more accurately. The model derivation and some questions of local solvability and uniqueness are also discussed.