Increasing the output power of single 808-nm laser diodes using diamond submounts produced by microwave plasma chemical vapour depositionстатья
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Дата последнего поиска статьи во внешних источниках: 5 сентября 2016 г.
Аннотация:We have designed and fabricated submounts from synthetic diamond grown by microwave plasma chemical vapour deposition and developed an economical process for metallising such submounts. Laser diode chips having an 808-nm emission wavelength, 3-mm-long cavity and 130-mu m-wide stripe contact were mounted on copper heat sinks with the use of diamond submounts differing in quality. The devices were tested for more than 150 h in continuous mode at an output power of 8 W on diamond with a thermal conductivity of 700 W m(-1) K-1, and no changes in their output power were detected. On diamond with a thermal conductivity of 1600 W m(-1) K-1, stable cw operation for 24 h at an output power of 12 W was demonstrated.