Surface Recombination of O and H Atoms in the Discharge Conditionsтезисы доклада

Дата последнего поиска статьи во внешних источниках: 28 мая 2015 г.

Работа с тезисами доклада

[1] Lopaev D. V., Smirnov A. V. Surface recombination of o and h atoms in the discharge conditions // 57th Gaseous Electronics Conference, 26-29 September, 2004, Shannon, Republic of Ireland. — Vol. 1. — American Physical Society USA, 2004. — P. 2001. The investigation surface recombination of atoms on a chemically inert surface directly in the discharge is one of the experiments that allows to insight into the detail mechanisms of complicated surface kinetics in plasma conditions. To provide accordance between micro- and macro-parameters, i.e. to develop a correct model of surface processes and thereby to determine micro-parameters themselves, it is necessary carry out enormous number of measurements. We have developed a modulating actinometry method allowing us to measure surface loss probabilities of atoms and radicals as functions of various macro-parameters (surface temperature, gas composition and pressure, atom density etc.) in thousands data points for reasonable time. In this work the O and H atom recombination on a fused silica surface in the discharge conditions is studied. The analysis of the experimental data has allowed us as to reveal detail mechanism of atom recombination on a surface and to clarify role of Eley-Rideal and Langmuir-Hinshelwood recombination as to determine values of some important micro-parameters such as chem- and phys- adsorption energies, activation energies and rate constant of some surface reactions with O and H atoms. The relation of obtained results with nature of active surface sites is also discussed.

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