Аннотация:Method of creation of nanogaps between metallic (Au) thin-film electrodes using additional evaporation of metal film on relatively wide preliminary created gap is elaborated and realized. A technique of electrodes “overhanging” by dry etching of a substrate is suggested and realized. Optimal etching parameters are found as well. A technique of limitation of the region for additional metal deposition by special additional PMMA mask with narrow window along line of gaps is suggested and realized. It allows a minimization of probability of parasitic gap shunting. . It is shown that elaborated method permits iterative approach to prescribed size of a gap by both decreasing of the gap width by deposition of additional metal on the walls of the gap and reconstruction of a gap by electromigration in the case of closing of the gap due to excessive metal deposition Samples with gap’s width less than 10 nm was obtained by such reconstruction of a gap.