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Interaction with charge carriers and the optical absorption spectrum of an associate formed by elementary defects (an oxygen vacancy and a silylene center) in SiO2статья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Patrakov A.E., Gritsenko V.A., Zhidomirov G.M.
- Журнал: Physics of the Solid State
- Том: 46
- Номер: 11
- Год издания: 2004
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 2021
- Последняя страница: 2025
- DOI: 10.1134/1.1825543
- Аннотация: The ability of intrinsic defects in SiO2 to capture electrons and holes is investigated by quantum-chemical methods. It is established that a twofold-coordinated silicon atom with two unpaired electrons, namely, the silylene center =Si:, and a silicon-silicon bond, namely, the oxygen vacancy ≡Si-Si≡, are electron-hole traps in SiO2. The properties of a defect in the form of an associate of the two above centers are studied. It is shown that this defect can capture electrons and holes; i.e., it is an amphoteric defect in SiO2. The optical absorption spectrum of the studied associate virtually coincides with that of the oxy radical (≡Si-Ȯ) in silicon dioxide. © 2004 MAIK "Nauka/Interperiodica".
- Добавил в систему: Жидомиров Георгий Михайлович