Место издания:Национальный исследовательский ядерный университет "МИФИ" Москва
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Аннотация:The galvanomagnetic effects in weak magnetic fields and the Shubnikov-de Haas oscillations in a quantizing magnetic field were investigated in (001) n-GaAs/Al{x}Ga{1-x}As:Si heterostructures (x = 0.2; 0.3) at 4.2 K under uniaxial compression up to P = 3.5 kbar in the [110] and [1-10] directions. It has been established that uniaxial compression influence on the transport properties of two-dimensional electrons at the (001) n-GaAs/Al{x}Ga{1-x}As:Si heterointerface are determined by the emerging piezoelectric field and the charge redistribution caused by this field while the parabolicity and anisotropy of the energy spectrum of two-dimensional electrons do not change appreciably.