Graphitization of a diamond surface upon high-dose ion bombardment

Авторы: Andrianova N.N., Borisov A.M., Kazakov V.A., Mashkova E.S., Palyanov Yu N., Piirimova E.A., Popov V.P., Rizkhanov R.N., Sigalev S.K.
Журнал: Bulletin of the Russian Academy of Sciences: Physics
Том: 80
Номер: 2
Год издания: 2016
Издательство: Allerton Press Inc.
Местоположение издательства: United States
Первая страница: 156
Последняя страница: 160
DOI: 10.3103/S1062873816020040
Аннотация: Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.
Добавил в систему: Машкова Евгения Сергеевна

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