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Development of low noise radiation hard sensors and cables for the CBM silicon tracking systemстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 6 апреля 2016 г.
- Авторы: Chatterji S., Singla M., Lymanets A., Mueller W.F.J, Merkin M., Heuser J.M.
- Сборник: 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011; Valencia; Spain; 23 October 2011 through 29 October 2011; Code 88938
- Год издания: 2012
- Первая страница: 1065
- Последняя страница: 1070
- DOI: 10.1109/NSSMIC.2011.6154574
- Аннотация: he performance of Double Sided silicon Strip Detectors (DSSDs) and Kapton cables for the Silicon Tracking System (STS) of the upcoming Compressed Baryonic Matter (CBM) experiment at FAIR is being reported. The CBM STS will consist of 8 stations of DSSDs at a distance between 25-100 cm downstream of the target. These DSSDs have a pitch of around 58 μm, stereo angle of ± 7.5 0 with double metallization on either side. Total integrated fluence is expected to reach 1×10 15 n eq cm -2 for some of the STS stations. We present the first 3-D TCAD simulated results on DSSDs using tools from SYNOPSYS. To determine the radiation hardness of these sensors, we have irradiated some of the prototypes at KRI Cyclotron facility. Our radiation damage model implemented in TCAD simulations is able to reproduce the irradiated data. Besides the static characteristics, we have also extracted interstrip parameters relevant to understand strip isolation and cross-talk issues. Transient simulations have been performed to estimate the charge collection of irradiated sensors and the collected charge has been found to exactly mimic the variation of interstrip resistance with bias voltage. Also parameters relevant for noise calculations like metal trace resistance have been measured.
- Добавил в систему: Меркин Михаил Моисеевич