Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compoundsстатья

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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.

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[1] Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: Pbx-based compounds / S. V. Ovsyannikov, V. V. Shchennikov, Y. S. Ponosov et al. // Journal of Physics D - Applied Physics. — 2004. — Vol. 37, no. 8. — P. 1151–1157. In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-X Sn-x Se). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm(-1) for PbSe and Pb1-x SnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl –> GeS structural phase transition with increasing Sri content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar. [ DOI ]

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