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Growth of InN films and nanorods by H-MOVPEстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Park Hyun Jong, Kryliouk Olga, Anderson Tim, Khokhlov Dmitry, Burbaev Timur
- Журнал: Physica E: Low-Dimensional Systems and Nanostructures
- Том: 37
- Номер: 1-2
- Год издания: 2007
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 142
- Последняя страница: 147
- DOI: 10.1016/j.physe.2006.06.022
- Аннотация: InN films and nanorods were grown by hydride metalorganic vapor phase epitaxy (H-MOVPE) and the effects of growth temperature, and NH3/TMIn and HCl/TMIn ratios on morphological dependences were studied. The growth habit of InN varied from thin film to microrod to nanorod to no deposition as the growth conditions were changed about transition from growth to etching conditions. The growth and etch regimes were also predicted by chemical equilibrium calculations of In-C-H-Cl-N-inert system. The optical properties of InN nanorods and columnar structured films were measured by room temperature PL and a maximum intensity was observed at 1.08 eV for both structures. (C) 2006 Elsevier B.V. All rights reserved.
- Добавил в систему: Хохлов Дмитрий Ремович