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Microcrystalline, nanocrystalline, and ultrananocrystalline diamond chemical vapor deposition: Experiment and modeling of the factors controlling growth rate, nucleation, and crystal sizeстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: May P.W., Ashfold M.N.R, Mankelevich Yu A.
- Журнал: Journal of Applied Physics
- Том: 101
- Номер: 5
- Год издания: 2007
- Издательство: American Institute of Physics
- Местоположение издательства: United States
- Первая страница: 053115
- DOI: 10.1063/1.2696363
- Аннотация: Ar/CH4/H-2 gas mixtures have been used to deposit microcrystalline diamond, nanocrystalline diamond, and ultrananocrystalline diamond films using hot filament chemical vapor deposition. A three-dimensional computer model was used to calculate the gas phase composition for the experimental conditions at all positions within the reactor. Using the experimental and calculated data, we show that the observed film morphology, growth rate, and across-sample uniformity can be rationalized using a model based on competition between H atoms, CH3 radicals, and other C-1 radical species reacting with dangling bonds on the surface. Proposed formulas for growth rate and average crystal size are tested on both our own and published experimental data for Ar/CH4/H-2 and conventional 1% CH4/H-2 mixtures, respectively. (c) 2007 American Institute of Physics.
- Добавил в систему: Манкелевич Юрий Александрович
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| [1] | May P. W., Ashfold M. N., Mankelevich Y. A. Microcrystalline, nanocrystalline, and ultrananocrystalline diamond chemical vapor deposition: Experiment and modeling of the factors controlling growth rate, nucleation, and crystal size // Journal of Applied Physics. — 2007. — Vol. 101, no. 5. — P. 053115. Ar/CH4/H-2 gas mixtures have been used to deposit microcrystalline diamond, nanocrystalline diamond, and ultrananocrystalline diamond films using hot filament chemical vapor deposition. A three-dimensional computer model was used to calculate the gas phase composition for the experimental conditions at all positions within the reactor. Using the experimental and calculated data, we show that the observed film morphology, growth rate, and across-sample uniformity can be rationalized using a model based on competition between H atoms, CH3 radicals, and other C-1 radical species reacting with dangling bonds on the surface. Proposed formulas for growth rate and average crystal size are tested on both our own and published experimental data for Ar/CH4/H-2 and conventional 1% CH4/H-2 mixtures, respectively. (c) 2007 American Institute of Physics. [ DOI ] |