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Metallic single-electron transistor without traditional tunnel barriersстатья
Дата последнего поиска статьи во внешних источниках: 2 мая 2018 г.
- Авторы: Krupenin V.A., Zorin A.B., Presnov D.E., Savvateev M.N., Niemeyer J.
- Журнал: Physics Uspekhi
- Том: 44
- Номер: Supplement 171 (10)
- Год издания: 2001
- Издательство: Russian Academy of Sciences
- Местоположение издательства: Russian Federation
- Первая страница: 113
- Последняя страница: 116
- DOI: 10.1070/1063-7869/44/10S/S25
- Аннотация: We report a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1 µm long) connecting a 1 µm-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel junctions of traditional SETs. Our transistor with a total asymptotic resistance of 110 kΩ showed a very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages Vg. In the Coulomb blockade region (|V| ≤ about 0.5 mV), we observed a strong suppression of the co-tunneling current allowing appreciable modulation curves V(Vg) to be measured at currents I as low as 100 fA. The noise figure of our SET was found to be similar to that of typical Al/AlOx/Al single-electron transistors, viz. δQ approx 5 × 10-4e/√Hz at 10 Hz.
- Добавил в систему: Преснов Денис Евгеньевич