Polarization of porous silicon photoluminescence: Alignment and built-in anisotropyстатья
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Дата последнего поиска статьи во внешних источниках: 2 марта 2016 г.
Аннотация:We report the observation of the anisotropy of the polarization properties of the porous Si photoluminescence. In the edge excitation geometry (exciting light incident on a cleaved edge of the sample) the luminescence polarization is aligned mainly in the [100] direction normal to the surface. The effect is described within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and/or flattened, dielectric elliptical Si nanocrystals with preferred orientation normal to the surface.