STUDY OF VACANCY DEFECTS IN PBSE AND PB1-XSNXSE BY POSITRON-ANNIHILATIONстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Авторы:
POLITY A.,
KRAUSEREHBERG R.,
ZLOMANOV V.,
STANOV V.,
CHATCHATUROV A.,
MAKINEN S.
Аннотация:Positron lifetime measurements have been performed to study vacancy defects in vapour-liquid-solid (VLS) grown PbSe and Pb1-xSnxSe (x = 0.07, 0.1, 0.3). Post-growth annealing under various vapour pressure conditions has been used to change the number of Pb vacancies, resulting in the determination of the specific positron trapping rate mu(v)Pb = (1.0+/-0.1) X 10(14) s-1. The sensitivity range of the positron annihilation method to the Pb vacancies was found to be 10(17) < [V(Pb)] < 10(20) cm-3. Positron lifetimes in perfect PbTe, PbSe and PbS crystals have been calculated. Moreover, we have predicted lifetimes of positrons trapped by vacancies. The calculated lifetimes in bulk and defects correspond well to the experimentally determined values.