Photoluminescence of Er3+ ions in amorphous silicon layers under intensive laser excitationстатья
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Transients of the photoluminescence (1.54 mum) of Er3+ ions embedded in an amorphous silicon matrix excited with intensive laser pulses are simulated using a phenomeno-logical model which takes into account both the defect-related excitation mechanism and stimulated optical transitions in the ions. The simulated transients are compared with the experimental ones observed in Er-doped amorphous silicon layers under pulsed laser excitation. The modeling and the experimental results demonstrate a possibility to realize a regime of superradiance, in the system of Er3+ ions pumped via an electronic excitation of the amorphous matrix.