High-efficiency erbium ion luminescence in silicon nanocrystal systemsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2-3 nm in size can be practically completely transferred to Er3+ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 mum. Possible reasons for the high excitation efficiency of the Er3+ ions are discussed, and the conclusion is drawn that the Forster mechanism is dominant in the energy transfer processes occurring in these structures. (C) 2004 MAIK "Nauka / Interperiodica".