Quantum simulation of structure switching in a molecular systemстатья
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Дата последнего поиска статьи во внешних источниках: 28 июня 2016 г.
Аннотация:This article presents the results of ab initio quantum simulation of graphite-like structure formation from amorphous carbon. It is devoted to explaining a resistivity switching mechanism in experiments on phase-change memory. In this work, a two-scale molecular dynamics model is used, which consists of Car-Parrinello quantum molecular dynamics (CPMD) and modified Ehrenfest molecular dynamics. The results of simulation point out to the appearance of a layered graphite-like molecular structure at an increase in temperature. These changes in the atomic configuration can be considered as a second-order phase transition in nanostructured material, which leads to threshold resistivity switching.