Recombination of O and H Atoms on the Surface of Nanoporous Dielectricsстатья

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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.

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[1] Recombination of o and h atoms on the surface of nanoporous dielectrics / T. V. Rakhimova, O. V. Braginsky, A. S. Kovalev et al. // IEEE Transactions on Plasma Science. — 2009. — Vol. 37, no. 9. — P. 1697–1704. The interaction of O and H atoms with SiOCH nanoporous low-dielectric-constant (low-k) films is studied in the far plasma afterglow in the absence of ion and photon fluxes on the surface. The loss probabilities of O and H atoms are directly measured by plasma-induced actinometry. Modification of low-k films during the experimental scans was studied by the Fourier transform infrared spectroscopy technique. The model of O- and H-atom recombination in nanoporous materials was developed to analyze the experimental data. It is shown that the main mechanism of the O and H loss is their surface recombination. The consumption of these atoms in the reactions with the carbon-containing hydrophobic groups has a minimal contribution. Thus, the surface recombination defines a damage depth in low-k films. It was shown that the oxygen atoms lead to the noticeable removal of CH3 groups. On the contrary, hydrogen atoms do not break Si-CH3 bonds, allowing the avoidance of plasma damage in the case of the hydrogen-plasma-based resist strip in appropriate conditions. [ DOI ]

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