Аннотация:Over fifty various inorganic crystals as well as some of their solid solutions have been considered in search for a replacement substrate. Among them, the main attention was paid to candidates from the viewpoint of phase stability, easy of growth and other physico-chemical properties. The epitaxial relations were examined for some crystallographic orientations of the Ga-nitride and substrates like Al2O3, ZnO MgO, ZrO2, HfO2, MgAl2O4, ZnAl2O4, ZnGa2O4, TiZn2O4, YAlO3, LaAlO3,LaGaO3, LaGaO3, NdGaO3, KTaO3, SrTiO3, Si, SiC.
In this connection, the Hartman-Perdok concept was used to estimate the atomic surface topology of the film/substrate interface.