Analysis of Total Ionizing Dose effects for highly scaled CMOS devices in Low Earth Orbitстатья

Информация о цитировании статьи получена из Scopus, Web of Science
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Дата последнего поиска статьи во внешних источниках: 26 декабря 2018 г.

Работа с статьей

[1] Analysis of total ionizing dose effects for highly scaled cmos devices in low earth orbit / M. Sajid, N. G. Chechenin, F. S. Torres et al. // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. — 2018. — Vol. 428. — P. 30–37. Total Ionizing Dose (TID) effects are an essential concern for integrated devices that are operating in space environment. We present in this work an extensive study of TID effects in Deep-Submicron and Nanoscale CMOS technologies. Principal aspects are the changes of the transistors I-V characteristics due to TID effects, the variation of the threshold voltage and the impact of radiation on the carrier densities and mobility as well as on the electrical potentials and the leakage currents. Further, we discuss a potential solution that reduces TID effects in CMOS devices. The device level simulations consider a satellite application that orbits in Low Earth Orbit (LEO), leading to dose levels of up to 500 krad(Si). Results clearly indicate the high impact of TID on the transistor parameters, enforcing the designer to consider countermeasures in order to guarantee the circuits reliability. [ DOI ]

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