Anomalous relaxation of light-induced states of a-Si:Hтезисы доклада

Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.

Работа с тезисами доклада


[1] Anomalous relaxation of light-induced states of a-si:h / A. G. Kazanskii, I. A. Kurova, N. N. Ormont, I. P. Zvyagin // 17th International Conference on AMORPHOUS AND MICROCRYSTALLINE SEMICONDUCTORS. Abstract. — Budapest, 1997. — P. 224. For a large variety of B, P doped and undoped a-Si:H films, we observed the non-monotonic kinetics of structural changes at elevated temperatures (above 100C), indicating the coexistence of two processes described by stretched exponentials. While the faster process hascharacteristics corresponding to the conventional metastable dangling bond creation, the characteristics of the slow process are shown to be anomalous (the activation energy for defect creation larger than that for the normal process and the parameter, beta, decreasing with temperature). To describe the anomalous process, we propose a phenomenological model based on a three-level configuration-coordinate diagram with correlated activation energies for the light-induced metastable state creation and annealing. The model account for the observed features of the anomalous process. A possible underlying microscopic mechanism of structural changes is discussed.

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