Аннотация:The earlier developed molecular dynamics approach is used to simulate the thin film
glancing angle deposition. The deposition at glancing angles is used for the production of
optical thin films with low refractive indices. Both low-energy and high-energy deposition
processes are considered for the case of silicon dioxide thin films. It is revealed that glancing
angle low-energy deposition forms silicon dioxide films with low densities of about 1,5 g/cm3
and low refractive indices. Density profiles of growing films essentially depend on the initial
conditions of the deposition process. The density of high-energy deposited films achieves 2,4
g/cm3. This value is close to that obtained before in the case of normal incidence deposition.