Аннотация:The influence of the antiferromagnetic layer thickness on the magnetic properties of the trilayered thin-film structures with the exchange bias phenomenon was studied in the temperature range from 100 up to 295 K. Dependences of the coercive force and exchange bias field on AF-layer thickness were analyzed for all structures with AF layer thickness from 2 nm up to 50 nm at room and low temperatures. The explanation in terms of the anisotropy and thermal energies competition was given for disclosure of an exchange bias for structures with 2 nm AF layer thickness at low temperatures