Comparative characterization of chemical vapor deposition diamond films by scanning cathodoluminescence microscopyстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Thin diamond films grown by chemical vapor deposition (CVD) process on Si substrates under similar deposition conditions in the microwave-excited (MW) and direct current (DC) plasma discharges were taken for comparative examination. Raman spectra, photoluminescence (PL) spectroscopy, and color cathodoluminescence scanning electron microscopy (CCL-SEM) have been used for characterization of the structure and composition features of polycrystalline diamond films. No essential difference in Raman spectra for the CVD diamond films was detected. A significant difference was revealed in the PL spectra and in CCL-SEM images.