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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Self-induced transparency of intense few-cycle terahertz pulses in n-doped siliconтезисы доклада
- Авторы: Chefonov O., Ovchinnikov A., Savel’ev A., Agranat M.
- Сборник: Book of Abstracts of the International Conference on Ultrafast Optical Science (UltrafastLight-2018)
- Тезисы
- Год издания: 2018
- Место издания: ФИАН, Москва
- Первая страница: 86
- Последняя страница: 86
- Аннотация: Intense few cycle terahertz pulses may exhibit complex non-linear behavior under interaction with heavily n-doped Silicon. We show that a fast increase in the transmission of the 700 fs electromagnetic pulse (central frequency ~1.5 THz) through the 245-µm thick n-doped silicon sample with carrier concentration of 9x1016 cm-3 (low field transmission of ~0.02%) saturates at the field strength of ~5 MV/cm-1 at ~ 8% and then drops twofold at ~20 MV/cm-1. Electro-optical sampling measurements reveal formation of a single cycle terahertz pulse at highest field strengths due to an efficient cut-off of all field oscillations except for the first one by a thin layer ionized by this oscillation.
- Добавил в систему: Савельев-Трофимов Андрей Борисович