Chiral visible light metasurface patterned in monocrystalline silicon by focused ion beamстатья

Статья опубликована в высокорейтинговом журнале

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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 30 августа 2018 г.

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[1] Chiral visible light metasurface patterned in monocrystalline silicon by focused ion beam / M. V. Gorkunov, O. Y. Rogov, A. V. Kondratov et al. // Scientific reports. — 2018. — Vol. 8, no. 1. — P. 11623–1–11623–10. High refractive index makes silicon the optimal platform for dielectric metasurfaces capable of versatile control of light. Among various silicon modifcations, its monocrystalline form has the weakest visible light absorption but requires a careful choice of the fabrication technique to avoid damage, contamination or amorphization. Presently prevailing chemical etching can shape thin silicon layers into two-dimensional patterns consisting of strips and posts with vertical walls and equal height. Here, the possibility to create silicon nanostructure of truly tree-dimensional shape by means of the focused ion beam lithography is explored, and a 300nm thin flm of monocrystalline epitaxial silicon on sapphire is patterned with a chiral nanoscale relief. It is demonstrated that exposing silicon to the ion beam causes a substantial drop of the visible transparency, which, however, is completely restored by annealing with oxidation of the damaged surface layer. As a result, the fabricated chiral metasurface combines high (50–80%) transmittance with the circular dichroism of up to 0.5 and the optical activity of up to 20oC in the visible range. Being also remarkably durable, it possesses crystal-grade hardness, heat resistance up to 1000oC and the inertness of glass. [ DOI ]

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