Interpretation of the magnetoresistance in doped magnetic tunnel junctionsстатья
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions artificially doped by the introduction of layers of impurities in the middle of the barrier. The electron transport across the barrier is described by a combination of direct tunneling, tunneling assisted by spin-conserving scattering and tunneling assisted by spin-flip scattering. With this model, we interpret recent experimental results concerning the dependence of the TMR amplitude on the amount of impurities in the barrier and on temperature.