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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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2D electrons concentration and mobility in n-GaAs/AlGaAs:Si under uniaxial stressтезисы доклада
- Авторы: Bogdanov E.V., Minina N.Ya
- Сборник: Joint Eighteenth International Conference on High Pressure Semiconductor Physics & Second International Workshop on High Pressure Study of Superconductors, July 23 – 27 2018, Barcelona, Spain
- Тезисы
- Год издания: 2018
- Место издания: Institut de Ciència de Materials de Barcelona Barcelona, Spain
- Первая страница: 84
- Аннотация: The galvanomagnetic effects in weak magnetic fields and the Shubnikov-de Haas oscillations in a quantizing magnetic field were investigated in (001) n-GaAs/Al0.3Ga0.7As heterostructures at 4.2 K under uniaxial compression up to P = 3.5 kbar in the [110] direction. It has been established that uniaxial compression influence on the transport properties of two-dimensional electrons at the (001) n-GaAs/AlGaAs heterointerface are determined by the emerging piezoelectric field and the charge redistribution caused by this field while the parabolicity and anisotropy of the energy spectrum of two-dimensional electrons do not change appreciably.
- Добавил в систему: Богданов Евгений Владимирович