Probing of Free Charge Carriers in Nanostructured Silicon Layers by Attenuated Total Reflectance Techniqueстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 24 октября 2018 г.
Аннотация:Infrared spectroscopy in attenuated total reflection (ATR) mode is used to
evaluate the concentration of free charge carriers (electrons) in n-type
macroporous silicon (Si) layers formed by metal-assisted chemical etching of
crystalline silicon (c-Si) followed by additional doping with phosphorus. The
ATR spectra are fitted by considering an effective medium approximation and
Drude model, which is modified to describe an additional scattering of the
charge carriers on the surface of Si nanocrystals. The electron concentration
is of the order of 1019 cm^3 and it is slightly dependent on the layer
thickness, while the surface scattering of charge carriers increases with layer
thickness. The obtained results are discussed in view of possible applications
of the ATR method for an express diagnostics of doping efficiency of Si nanoand
microstructures for photonic and thermoelectrical applications.