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Thiophene-based monolayer OFETs prepared by Langmuir techniquesстатья Электронная публикация
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 11 января 2016 г.
- Авторы: Agina Elena V., Sizov Alexey S., Anisimov Daniil S., Trul Askold A., Borshchev Oleg V., Paraschuk Dmitry Y., Shcherbina Maxim A., Chvalun Sergey N., Ponomarenko Sergey A.
- Сборник: Proceedings of SPIE
- Серия: Organic Field-Effect Transistors XIV
- Том: 9568
- Год издания: 2015
- Место издания: SPIE-Intl Soc Optical Eng
- Первая страница: 95680Z
- DOI: 10.1117/12.2188338
- Аннотация: A novel fast, easily processible and highly reproducible approach to thiophene-based monolayer OFETs fabrication by Langmuir-Blodgett or Langmuir-Schaefer techniques was developed and successfully applied. It is based on selfassembly of organosilicon derivatives of oligothiophenes or benzothienobenzothiophene on the water-air interface. Influence of the conjugation length and the anchor group chemistry of the self-assembling molecules on the monolayer structure and electric performance of monolayer OFETs was systematically investigated. The efficient monolayer OFETs with the charge carrier mobilities up to 0.01 cm2/Vs and on/off ratio up to 106 were fabricated, and their functionality in integrated circuits under normal air conditions was demonstrated.
- Добавил в систему: Пономаренко Сергей Анатольевич