Аннотация:Quantum dots (QDs) have very wide scope
of applications: in biomedicine, for the construction
of photodetectors, solar cells, and electroluminescent
devices among them the most interesting QD-LED
displays. The II-VI QDs, for example CdSe and CdS,
have been studied extensively, however have serious
disadvantage – high toxicity of material, that’s why
another systems, such as A3B5-system, should be
investigated. InP is a promising material for the
creation of eco-friendly materials because it is more
stable than II-VI materials and does not contain toxic
elements, such as Cd, Hg, or Se. One of the ways to
produce InP QDs is phosphine synthetic route, which
allows to obtain QDs with narrow size distribution
and good crystallinity but quite low
photoluminescence intensity. This work is devoted to doping of InP QDs
with zinc using gaseous phosphine as phosphorous
precursor and myristic acid as stabylizer. We
demonstrate how zinc affects the optical properties of
QDs. We report the influence of different parameters
(zinc amount, stabilizer, temperature and duration of
synthesis) on luminescence wavelength and intensity.
In addition we show that doping with zinc is
accompanied with zinc-shell covering and is an
effective way to improve optical properties of InP
QDs.