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Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanismsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 16 октября 2015 г.
- Авторы: Ormont M.A., Zvyagin I.P.
- Журнал: Semiconductors
- Том: 49
- Номер: 4
- Год издания: 2015
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 437
- Последняя страница: 441
- DOI: 10.1134/S1063782615040156
- Аннотация: The specific features of the frequency dependence of the impedance of disordered semiconductors at low temperatures for the hopping conduction mechanism are analyzed. Emphasis is placed on the observed discrepancies between the experimental data and the available theory for the frequency dependence of the real part of the conductivity σ1(ω) in the region of crossover from a linear dependence to a quadratic dependence (the kink in the dependence of lnσ1(ω) on lnω) and for anomalously large values of cotγ (γ is the dielectric loss angle) measured experimentally. These discrepancies can be described on the basis of an approach that takes into account both the phonon and resonance contributions to the conductivity as well as the transition to the fixed-range hopping conduction at frequencies higher than the crossover frequency.
- Добавил в систему: Ормонт Михаил Александрович