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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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New Way of Solid State Domain Characterization in Silicon Carbide and Gallium Nitrideтезисы доклада
- Автор: Boiko M.E.
- Сборник: Abstracts of the XI International Conference on Small-Angle Scattering. May 17–20, 1999
- Серия: Brookhaven National Laboratory
- Тезисы
- Год издания: 1999
- Место издания: Upton, New York, USA,
- Аннотация: Domains in SiC monocrustals remind extended along a direction [0001] columns 7000À by thickness 200-600À. From rocking curves using Sherer and Warren-Averbuch analysis the thickness of domains is close to S-AS results. The x-ray topography demonstrates domains of the large sizes, than thickness of columns from S-AS. Obviously, there are observed clusters from packs of columns (more, than 10 * 10). Microscopically etched thick films of Gallium Nitride looks like irregular hexagonal net. We supposed gas-crystal cluster-like allocation of particles model. Domains look like hexagonal prism (columns) of 200-300nm in length and 50nm along the surface.
- Добавил в систему: Бойко Михаил Евгеньевич