Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodesстатья

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Scopus, Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 октября 2015 г.

Работа с статьей

[1] Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes / J. Forneris, A. Battiato, M. D. Gatto et al. // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. — 2015. — Vol. 348. — P. 187. Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10lm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sampleusing a scanning 1.8 MeV He+ micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV0,lZPL= 575 nm), as well as from cluster crystal dislocations (A-band,l = 400–500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands)from He-related defects was detected (lZPL = 536.3 nm,lZPL = 560.5 nm); a low and broad peak around l=740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single photon emitters in diamond for applications in quantum optics and quantum cryptography. [ DOI ]

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