Rectification and resistive switching in mesoscopic heterostructures based on Bi2Se3статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 октября 2015 г.
Аннотация:We fabricated mesoscopic heterostructures based on topological insulator Bi2Se3 which exhibit a bipolar resistive switching (BRS) effect. The BRS effect could be related to the interface effect and the current transfer in such junctions exhibits a diode character with Schottky-like barriers in heavily doped semiconductors. It was shown that the deviation of the current–voltage characteristics (CVC) from the classic current transport Schottky-like diode behavior is due to the influence of the electric field on spreading resistance Rs that is temperature dependent and modified in strong electric fields.