Аннотация:The changes in the carrier scattering and in the temperature dependence of the Hall effect in Pb1-xGexTe<In> (x=0.5-12 at.%) resulting from the ferroelectric phase transition are studied. A strong decrease in the phase transition temperature Tc in indium-doped samples is explained by the appearance of frozen-in polarized defects. It is shown that an abrupt change of slope in the temperature dependence of the Fermi level which appears at Tc is caused by the changes of the energy band structure of Pb1-xGexTe at the phase transition.