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Phase size effect in thin Ge-Se polycrystalline filmsстатья Исследовательская статья
- Авторы: Aleksandrovich E.V., Stepanova E.V., Vakhrouchev A.V., Bulatov D.L., Aleksandrovich A.N.
- Журнал: Technical Physics. The Russian Journal of Applied Physics
- Том: 58
- Номер: 9
- Год издания: 2013
- Первая страница: 1291
- Последняя страница: 1296
- DOI: 10.1134/S106378421309003X
- Аннотация: The Raman spectra of thin (d = 60–170 nm) Ge-Se polycrystalline films obtained by vacuum thermal evaporation of Ge10Se90 glass are investigated in the spectral range 110–310 cm−1. The coexistence of the glasslike and crystalline phases α-Se, β-Se, and β-GeSe2 is established using the X-ray diffraction method. Analysis of diffraction patterns and the Raman spectra of polycrystalline samples of various thicknesses demonstrates a phase size effect in the transition of Se from the α-monoclinic to the β monoclinic modification (d ∼ 120 nm). It is found that the crystalline phase of Se is of the nanodisperse type with an average grain size of ∼30–50 nm. Crystallites of β-GeSe2 have an average size of ∼100–130 nm.
- Добавил в систему: Вахрушев Александр Васильевич