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Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer delta-doped with Mnстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 22 ноября 2015 г.
- Авторы: Kulbachinskii V.A., Oveshnikov L.N., Aronzon B.A.
- Журнал: Solid State Phenomena
- Том: 233
- Год издания: 2015
- Первая страница: 93
- Последняя страница: 96
- DOI: 10.4028/www.scientific.net/SSP.233-234.93
- Аннотация: Transport, magnetotransport and magnetic properties of structures GaAs/InAs/GaAs with the InAs quantum dot (QD) layer have been investigated in the temperature interval 4.2<T<300 K. The structures were delta-doped by Mn from a one side to provide magnetic properties and by carbon from the other side to enhance the p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. The anomalous Hall-effect was observed at low T. The role of additional disorder in conducting channel due to the QD layer was investigated. It is shown a principal role of a fluctuation potential of Mn layer separated from conducting QD layer by a spacer in anomalous transport properties of structures. The negative magnetoresistance was observed at low T due to the reduction of the spin-flip scattering by aligning spins in magnetic field.
- Добавил в систему: Кульбачинский Владимир Анатольевич