ИСТИНА

NOVELTY - Substance of the invention: DTN on the basis of a multi-layer thin-film heterostructure comprises two superconductors that form electrodes, and a layer with metal conductivity between them from a metal-alloyed semiconductor. The layer has a locally non-uniform structure and is made as capable of simultaneous formation of two independent current transport channels in its volume, one of which represents a combination of chains of admixture atoms of metal that connect both electrodes and form quasi-unidimensional channels with metal conductivity for transport of superconducting current, and the other one - consists of separately arranged admixture atoms of metal, which form localised conditions of admixture centres and provide for transport of normal tunnel current, besides, the specified quasi-unidimensional channels represent internal shunts for a tunnel current in the layer. The method includes serial application of the first and second layers of the superconductor onto the substrate, a layer of the metal-alloyed semiconductor between them, formed by spraying of the semiconductor and the metal. USE - Instrument making. ADVANTAGE - Elimination of direct flow of current via a layer with provision of resonance mechanisms of current transport, increased specific voltage and differential resistance of a DTN; improved reproducibility of parameters due to usage of thicker layers of an alloyed conductor.17 cl, 8 dwg, 1 tbl