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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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In this study, some patterns of hole transport in its interrelation with percolation magnetism (which is caused by localized charge carriers, simultaneously participating in the formation of magnetic and electrical properties of ion-implanted thin Ge:Mn (2 at.% Mn) films) are discovered and developed. As a result, it has been determined that the electron transport properties of Ge:Mn thin films with percolation magnetic ordering are a consequence of competition of band and hopping mechanisms of carrier transport in films of Ge:Mn with percolative magnetic ordering.