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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Nanowire Transistor as high sensitive bio- and chemical sensorдоклад на конференции
- Авторы: Krupenin V.A., Presnov D.E., Vlasenko V.S., Ushakova Y.S., Amitonov S.V.
- Конференция (Симпозиум) : 18th Int. Symposium - Nanostructures: Physics and Technology
- Даты проведения конференции: 2010
- Дата доклада: 23 июня 2010
- Тип доклада: не указан
- Докладчик: не указан
- Место проведения: St.Petersburg, Russia, Russia
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Аннотация доклада:
In this work authors present the results of the fabrication technology development and the experimental study of silicon nanowire field effect transistor (NW FET) as a potential sensor for application in biology and medicine. The original fabrication technology used silicon-on-insulator (SOI) material and did not involve Si doping and activation processes. Current-voltage characteristics of the experimental structures were measured in a bu®er solutions over a wide range (0 - 10 V) of the gate voltages. The possibility of using of the silicon NW FET as a sensitive field/charge sensor was demonstrated by pH measurements.
- Добавил в систему: Преснов Денис Евгеньевич