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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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We report the atomic mechanism of Sn-In-As-I thermoelectric clathrate oxidation by molecular oxygen probed by NAP XPS at different pressures and temperatures. By varying the oxygen pressure up to 0.1 mBar, we found that the oxidation process occurs in two steps, the rate of the first one is strongly dependent on the oxygen pressure. Room temperature oxidation does not lead to surface passivation.