ИСТИНА

In this work we held a calculation of the wave functions of carriers in the strained Si/Si1-xGex/Si quantum well in the direction of the growth of the structure as a function of the parameters of the layer. It was shown, that increase of a tunnel barrier transparency entails a transition from bipolar electron-hole system (EHS) with having two peaks wave function of electrons to spatially straight EHS. The novelty of the model is that the Schrodinger equations for the wave functions include not only the Coulomb interaction of the carriers. There is also added a term responsible for the exchange and correlation interaction, which becomes significant in case of the high concentrations of the carriers. With the help of asymptotic methods the analytical approximation of the solution was constructed and it was used for further numerical calculations. These calculations are useful in the analysis of many-particle nonequilibrium states occurring in low-dimensional structures (electron-hole liquid, plasma, biexcitons and others) at high excitation levels.