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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Structural and electrical characterizations of ZnO nanorods doped by Cr and enhancement-mode field-effect transistor fabricated from themдоклад на конференции
- Авторы: Kononenko O.V., Firsov A.A., Matveev D.V., Vdovin E.E., Panin G.N., Volkov V.T., Shestakov M.V., Baranov A.N.
- Конференция : Proceedings of 17th Int. Symp. “Nanostructures: Physics and Technology”
- Даты проведения конференции: 2009
- Дата доклада: 23 июня 2009
- Тип доклада: Стендовый
- Докладчик: не указан
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Аннотация доклада:
ZnO:Cr nanorods were synthesized from NaCl-Li2CO3 salt mixture with a solution processed Zn-containing precursor using a freeze-drying method combined with a milling technique. Crystallographic structure was studied using transmission electron microscopy. Optical properties of nanorods were investigated by cathodoluminescence spectroscopy. The nanorods were transferred onto oxidized silicon substrates. E-beam lithography was used to pattern aluminum electrodes contacting a single nanorod. I–V curves were measured using two point structures. Si back gate FET fabricated from the ZnO:Cr nanorod demonstrated n-channel enhance-mode behavior.
- Добавил в систему: Шестаков Михаил Викторович