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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Molecular single electron transistor on the basis of the planar nanostructureдоклад на конференции
- Авторы: Kolesov V.V., Soldatov E.S., Sapkov I.V.
- Международная Конференция : 20-th Int. Crimean Conference “Microwave & Telecommunication Technology” (Crimico’2010)
- Даты проведения конференции: 2010
- Тип доклада: Устный
- Докладчик: Kolesov V.V.
- Место проведения: 13-17 September 2010, Sevastopol, Crimea, Ukraine, Ukraine
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Аннотация доклада:
We have tested possibilities of focused ion beam microscope for molecular transistor nanoelectrodes implementation and showed that it’s using allow to decrease width of starting gaps in suspended electrodes technique to values of about 30 nm. It is facilitate farther improvement of processing and quality of a gap. It also allows simlification and shortening of the processing sequence. In situ production of different basic nanostructures was demonstrated. It can be particularly interesting for constructing and implementation of unique nanoelectronic systems.
- Добавил в систему: Солдатов Евгений Сергеевич