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Uniaxial stress influence on 2D electrons concentration and mobility in n-GaAs/AlGaAs:Si in the dark and after illuminationдоклад на конференции
- Авторы: Minina Natalia, Bogdanov Evgeny
- Международная Конференция : AIRAPT 26 joint with ACHPR 8& CHPC 19 Int. Conference on High Pressure Science and Technology
- Даты проведения конференции: 18-23 августа 2017
- Дата доклада: 21 августа 2017
- Тип доклада: Стендовый
- Докладчик: не указан
- Место проведения: Пекин, China
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Аннотация доклада:
High quality n-GaAs/Al0.29Ga0.71As:Si single heterostructures, grown by MBE epitaxy on (001) GaAs substrate were investigated under external [110] uniaxial compression up to P = 3.5 kbar in the dark and after illumination. Illumination by infrared diode at 1.7 K leads, after the diode switching, to the persistent photoconductivity with 2D electron concentration and mobility in the quantum well increased in 2.5 and 4 times correspondingly. Qualitatively, this result implies light excitation of deep DX centers, connected with Si dopant and responsible for the persistent photoconductivity, that is accompanied with decrease of scattering centers after the spacer. Under compression, we observed decrease of 2D electrons mobility and concentration in persistent photoconductivity state.
- Добавил в систему: Богданов Евгений Владимирович