ИСТИНА

Silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching were investigated by micro-Raman spectroscopy, which revealed a strong heating under laser irradiation with a HeNe laser at 633 nm. SiNWs temperature dependencies on laser intensity and SiNW length were measured. We found that the temperature increase of 63 micron length SiNWs under the irradiation with intensity of 1 kW/cm2 could be 170K above room temperature. The observed heating is explained by low thermal conductivity of SiNWs and by a strong localization of the excitation light in SiNW array. The observed phenomenon can be interesting for application of SiNWs in thermal isolation and in hyperthermia therapy.